Title : 
Switching in NERFET circuits
         
        
            Author : 
Kastalsky, A. ; Luryi, S. ; Gossard, A.C. ; Chan, W.K.
         
        
            Author_Institution : 
Bell Communications Research, Murray Hill, NJ, USA
         
        
        
        
        
            fDate : 
7/1/1985 12:00:00 AM
         
        
        
        
            Abstract : 
NERFET is a three-terminal device possessing a pronounced negative differential resistance due to the effect of real-space hot-electron transfer. The device structure, substantially modified compared to our earlier reports, gives an improved performance at room temperature. In this work, logic operation of a circuit formed by two NERFET´s is demonstrated for the first time. Sharp switching of output voltage is observed. Using this circuit, we have demonstrated the operation of an inverter and a bistable switch. Under certain bias configurations the circuit also exhibits a tristable behavior which can be used for ternary logic.
         
        
            Keywords : 
Electrodes; Gallium arsenide; Inverters; Logic circuits; Logic devices; Superlattices; Switches; Switching circuits; Temperature; Voltage;
         
        
        
            Journal_Title : 
Electron Device Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/EDL.1985.26150