Title : 
Optical limiting in GaAs
         
        
            Author : 
Boggess, Thomas F., Jr. ; Smirl, Arthur L. ; Moss, Steven C. ; Boyd, Ian W. ; Van Stryland, Eric W.
         
        
            Author_Institution : 
North Texas State University, Denton, TX, USA
         
        
        
        
        
            fDate : 
5/1/1985 12:00:00 AM
         
        
        
        
            Abstract : 
We have used two-photon absorption, self-defocusing, and optically-induced melting in GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the limiting action from each of these mechanisms is discussed and demonstrated. Additionally, we measure a two-photon absorption coefficient of 26 cm/GW, which is in good agreement with the smallest values reported in the literature. A pulse-width study of the nonlinear absorption was conducted to isolate the effects of two-photon-generated free-carrier absorption. Results indicate that, even though the number of free-carriers is sufficient to severely defocus the incident beam, free-carrier absorption does not measurably contribute to the nonlinear absorption.
         
        
            Keywords : 
Gallium materials/devices; Infrared refraction; Limiting; Optical propagation in nonlinear media; Absorption; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical filters; Optical pulses; Optical refraction; Optical sensors; Optical variables control;
         
        
        
            Journal_Title : 
Quantum Electronics, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JQE.1985.1072688