DocumentCode
1105475
Title
Eigenstates and absorption spectra of interdiffused AlGaAs-GaAs multiple-quantum-well structures
Author
Li, E. Herbert ; Weiss, Bernard L. ; Chan, Kwok-Sum
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
32
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1399
Lastpage
1416
Abstract
We present a comprehensive analysis of the inter-well coupled eigenstates in interdiffused AlGaAs-GaAs multiple quantum-well structures. A full numerical calculation is considered without any approximation or presumption of the eigenstates. During the initial interdiffusion in the quantum-well structure with well and barrier thickness equaling 100 Å, the wavefunctions behave as in the case of a single quantum well with almost no well-to-well coupling of the states. However, as interdiffusion proceeds, the eigenstate in each subband forms minibands, as in the case of superlattice. Distortion of the coupled wavefunctions can also be observed as a consequence of the nonuniformity of the confined wells at the far sides of the multiquantum-well core. The polarized absorption coefficients, including valence band-mixing, are also calculated. Results show that the blue shift of the absorption edge is greater in the range of 10 Å⩽L d⩽30 Å. The two-dimensional quantum-well properties are at its strongest in the beginning of interdiffusion. An estimation of the modulator performance also shows an improvement of the contrast ratio and lower absorption loss during the initial stage of interdiffusion. This predicts wavelength tuning range of almost 60 nm
Keywords
III-V semiconductors; absorption coefficients; aluminium compounds; chemical interdiffusion; eigenvalues and eigenfunctions; gallium arsenide; semiconductor device models; semiconductor quantum wells; spectral line shift; valence bands; visible spectra; 100 A; AlGaAs-GaAs; absorption edge; blue shift; comprehensive analysis; contrast ratio; coupled wavefunctions; eigenstates; full numerical calculation; initial interdiffusion; inter-well coupled eigenstates; interdiffused AlGaAs-GaAs multiple-quantum-well structures; interdiffusion; modulator performance; multiquantum-well core; polarized absorption coefficients; quantum-well structure barrier thickness; quantum-well structure well thickness; single quantum well; two-dimensional quantum-well properties; valence band-mixing; visible absorption spectra; wavefunctions; well-to-well coupling; Absorption; Monolithic integrated circuits; Nonlinear optics; Optical modulation; Optical refraction; Optical variables control; Photonic band gap; Quantum well devices; Refractive index; Senior members;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.511553
Filename
511553
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