Self-aligned In0.53Ga0.47As/semi-insulating/n+InP junction field-effect transistors

Depletion-mode junction field-effect transistors (JFET´s) with InGaAs p-n junctions grown on compensated Fe:InP or highly resistive In0.52Al0.48As isolation layers grown on n⁺-InP substrates have been fabricated using a combination of molecular-beam epitaxy and metalorganic chemical vapor deposition growth techniques. Using a self-aligned gate technology with a 1-µm gate length, devices with high transconductance (80 mS/mm), low leakage current (<100 nA), and a gate-to-source capacitance of 0.4 pF have been fabricated. This is apparently the first report where InP-based alloy FET´s have been fabricated on an isolated n⁺-substrate. This structure has application to monolithically integrated photoreceivers.