Principles of large-signal MESFET operation

Author

Winslow, T.A. ; Trew, R.J.

Author_Institution

North Carolina State Univ., Raleigh, NC

Volume

42

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

935

Lastpage

942

Abstract

The large-signal RF operating principles of MESFET amplifiers are investigated using a circuit simulator that incorporates a physics based MESFET model which has been augmented with a new gate breakdown model. It is demonstrated that the main saturating mechanisms of the MESFET under large-signal RF operation are forward and reverse conduction of the gate electrode. Maximized RF performance of MESFET amplifiers is obtained by optimally positioning the dynamic load line relative to the RF-IV plane. The position of the dynamic V-I characteristic is determined by device breakdown, bias, and circuit tuning conditions

Keywords

circuit analysis computing; microwave amplifiers; power amplifiers; semiconductor device models; solid-state microwave circuits; MESFET amplifiers; RF operating principles; RF-IV plane; bias; circuit simulator; circuit tuning conditions; device breakdown; dynamic V-I characteristic; dynamic load line; forward conduction; gate breakdown model; gate electrode; large-signal MESFET operation; maximized RF performance; physics based MESFET model; reverse conduction; saturating mechanisms; Electric breakdown; Electrodes; Equivalent circuits; MESFET circuits; Microwave amplifiers; Physics; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor process modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.293561

Filename

293561