The effect of MOS Channel length on the performance of insulated gate transistors

The effect of MOS channel length on n-channel 600-V insulated gate transistors (IGT´s) is evaluated. When the channel length was decreased from 1.9 to 0.8 µm, a doubling of the forward conduction current was measured at a forward drop of 2 V for IGT´s with a turn-off time of 2 µs. Also, a better forward drop versus turnoff time tradeoff were observed. However, a 25-50-percent decrease in latching current was measured for the short-channel devices under dynamic switching conditions at 150°C.