A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology

A 288-GHz lens-integrated high-power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output power of -1.5 dBm with a 275-mW DC power consumption. The radiated power of the packaged source is -4.1 dBm, which is the highest reported radiated power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500 x 570 μ m².