DocumentCode
1105703
Title
Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disordering
Author
Nakashima, Hisao ; Semura, Shigeru ; Ohta, Tsuneaki ; Uchida, Yoko ; Saito, Hiroshi ; Fukuzawa, Tadashi ; Kuroda, Takao ; Kobayashi, Keisuke L I
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
21
Issue
6
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
629
Lastpage
633
Abstract
A new transverse mode controlled buried-multiquantum-well (BMQW) laser has been fabricated using the simple and reliable Zn-diffusion-induced disordering process. BMQW lasers are characterized by low threshold current (20 mA) and single transverse and longitudinal mode oscillation. It is observed that the threshold current is proportional to the stripe width and the transverse mode is controlled by controlling the stripe width. From these results, it is confirmed that the BMQW structure provides good optical confinement as well as current confinement.
Keywords
Gallium materials/lasers; Laser modes; Chemical lasers; Laser modes; Molecular beam epitaxial growth; Optical control; Optical refraction; Optical superlattices; Optical variables control; Quantum well devices; Threshold current; Zinc;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072713
Filename
1072713
Link To Document