DocumentCode :
1105715
Title :
CW InGaAsP/InP injection lasers with very low threshold current density at room temperature
Author :
Dolginov, L.M. ; Drakin, A.E. ; Eliseev, P.G. ; Sverdlov, B.N. ; Shevchenko, E.G.
Author_Institution :
State Research Institute of Rare Metals, Moscow, USSR
Volume :
21
Issue :
6
fYear :
1985
fDate :
6/1/1985 12:00:00 AM
Firstpage :
646
Lastpage :
649
Abstract :
Laser diodes of InGaAsP/InP are studied with a modified double heterostructure containing an ultrathin ( 
m) active layer and adjacent guiding layers transparent for laser emission ("three-layer waveguide" structure). Due to improved optical confinement in these structures, the laser action at room temperature has been observed with a threshold current density as low as ∼0.5 kA/cm2. CW operation in broad area diodes has been obtained. The dependence of threshold on the thickness of active layer is discussed in terms of optical confinement and nonradiative loss due to carrier leakage and Auger recombination. It is concluded that the leakage is the probable origin of the threshold increase at smallest thickness of the active layer rather than light diffraction.
m) active layer and adjacent guiding layers transparent for laser emission ("three-layer waveguide" structure). Due to improved optical confinement in these structures, the laser action at room temperature has been observed with a threshold current density as low as ∼0.5 kA/cm2. CW operation in broad area diodes has been obtained. The dependence of threshold on the thickness of active layer is discussed in terms of optical confinement and nonradiative loss due to carrier leakage and Auger recombination. It is concluded that the leakage is the probable origin of the threshold increase at smallest thickness of the active layer rather than light diffraction.Keywords :
CW lasers; Gallium materials/lasers; Laser thermal factors; Carrier confinement; Diode lasers; Indium phosphide; Optical diffraction; Optical losses; Optical waveguides; Stimulated emission; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072714
Filename :
1072714
Link To Document :
