Title :
A 0.26-μm2 U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology
Author :
Lai, Han-Chao ; Cheng, Kai-Yuan ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Nat. Tsing-Hua Univ., Hsin-Chu
Abstract :
A novel one time programming (OTP) cell with a nitride-based storage has been developed for advanced programmable logic applications. This cell that is processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/ off window. It exhibits a superior disturb immunity in program and read operations. In addition, a very small cell size (0.263 mum2 ) has been achieved using 90-nm pure CMOS logic process and is scalable in more advanced CMOS logic technologies by eliminating the constraint of transistor gate-oxide thickness. The all new OTP cell has a wide ON/OFF window and a superior writing efficiency by source-side injection programming mechanism. This novel OTP cell is a very promising programmable logic solution, with a fully CMOS-logic-compatible process below the 90-nm node.
Keywords :
CMOS logic circuits; nanoelectronics; programmable logic devices; CMOS technology; CMOS-logic-compatible process; advanced programmable logic; nitride-based storage; one time programming cell; pure CMOS logic process; size 90 nm; source-side injection programming mechanism; superior disturb immunity; superior writing efficiency; CMOS logic circuits; CMOS process; CMOS technology; Fuses; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Transistors; CMOS one time programming (OTP); logic nonvolatile memory (NVM); nitride storage node; source-side injection (SSI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.903953
