CMOS Dual-Work-Function Engineering by Using Implanted Ni-FUSI

Author

Lin, Chien-Ting ; Ramin, Manfred ; Pas, Michael ; Wise, Rick ; Fang, Yean-Kuen ; Hsu, Che-Hua ; Huang, Yao-Tsung ; Cheng, Li-Wei ; Ma, Mike

Author_Institution

United Microelectron. Corp., Hsinchu

Volume

28

Issue

9

fYear

2007

Firstpage

831

Lastpage

833

Abstract

For the first time, a simple CMOS fully silicided (FUSI) process achieving n/pMOS band-edge work function was demonstrated, which is fully compatible with conventional CMOS process. Dual-work-function CMOS FUSI, with a wide range of 800 mV, was achieved by implantation of Yb into the poly of the nMOS gate (4.1-eV work function) and Ga into the poly of the pMOS gate (4.9-eV work function), respectively. The placement of the tuning elements at the metal/dielectric interface was engineered with the thermal budget, as well as the implant dose and species.

Keywords

CMOS integrated circuits; MOSFET; gallium; ion implantation; nickel; semiconductor device metallisation; semiconductor doping; work function; ytterbium; CMOS FUSI; CMOS dual-work-function engineering; NiJk:Ga - System; NiJk:Yb - System; band-edge work function; fully silicided process; implant dose; metal-dielectric interface; nMOS gate; pMOS gate; thermal budget; voltage 800 mV; Annealing; CMOS process; Dielectrics; Electrodes; Implants; Laboratories; MOS devices; Microelectronics; Research and development; Very large scale integration; CMOS; dual implant; fully silicided (FUSI); work function;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.903929

Filename

4294063