DocumentCode :
1105762
Title :
A consistent nonisothermal extension of the Scharfetter—Gummel stable difference approximation
Author :
McAndrew, C.C. ; Singhal, K. ; Heasell, E.L.
Author_Institution :
University of Waterloo, Waterloo, Ontario, Canada
Volume :
6
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
446
Lastpage :
447
Abstract :
Computer simulation is becoming an increasingly important aspect of device analysis and design, and it is well known that stability of the associated numerical solution procedures is enhanced by use of the Scharfetter-Gummel (SG) approximation. Accurate transport models utilizing carrier temperature as a crucial parameter are emerging, however the SG expression is valid only for isothermal analyses. In this letter, a consistent nonisothermal extension of the SG stable difference approximation is presented. Simplifications of the new expression are shown to agree with previous results.
Keywords :
Casting; Current density; Diodes; Electron devices; Electrostatics; Isothermal processes; Numerical simulation; Signal analysis; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26187
Filename :
1485340
Link To Document :
بازگشت