• DocumentCode
    1105783
  • Title

    Hot-electron-induced MOSFET degradation at low temperatures

  • Author

    Tzou, J.J. ; Yao, C.C. ; Cheung, R. ; Chan, H.

  • Author_Institution
    Advanced Micro Devices, Inc., Sunnyvale, CA
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    450
  • Lastpage
    452
  • Abstract
    The n-channel LDD MOSFET lifetime is observed to follow \\tau =(A/I_{d})(I_{sub}/I_{d})^{-n} from 77 to 295 K when the device is stressed near the maximum Isub. Here Idis the drain current and A is the proportionality constant. The experimental result indicates that n is approximately 2.7 and is independent of temperature. However, the proportionality constant A follows A = A_{0} \\exp (-E_{a}/kT) , with E_{a} = 39 meV. The smaller proportionality constant at low temperatures suggests that hot-electron injection (HEI) degradation is caused by the electron trapping in the oxide.
  • Keywords
    Degradation; Electron traps; Impact ionization; Interface states; Intrusion detection; MOSFET circuits; Secondary generated hot electron injection; Temperature measurement; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26189
  • Filename
    1485342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105783