DocumentCode :
1105783
Title :
Hot-electron-induced MOSFET degradation at low temperatures
Author :
Tzou, J.J. ; Yao, C.C. ; Cheung, R. ; Chan, H.
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA
Volume :
6
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
450
Lastpage :
452
Abstract :
The n-channel LDD MOSFET lifetime is observed to follow 
from 77 to 295 K when the device is stressed near the maximum Isub . Here Id is the drain current and 
is the proportionality constant. The experimental result indicates that 
is approximately 2.7 and is independent of temperature. However, the proportionality constant follows 
, with 
meV. The smaller proportionality constant at low temperatures suggests that hot-electron injection (HEI) degradation is caused by the electron trapping in the oxide.
from 77 to 295 K when the device is stressed near the maximum I is the proportionality constant. The experimental result indicates that is approximately 2.7 and is independent of temperature. However, the proportionality constant follows , with meV. The smaller proportionality constant at low temperatures suggests that hot-electron injection (HEI) degradation is caused by the electron trapping in the oxide.Keywords :
Degradation; Electron traps; Impact ionization; Interface states; Intrusion detection; MOSFET circuits; Secondary generated hot electron injection; Temperature measurement; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26189
Filename :
1485342
Link To Document :
