• DocumentCode
    1105792
  • Title

    Noise behavior of 1-µm gate-length modulation-doped FET´s from 10-2to 108Hz

  • Author

    Liu, S.M. ; Das, M.B. ; Kopp, W. ; Morkoç, H.

  • Author_Institution
    The Pennsylvania State University, University Park, PA
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    453
  • Lastpage
    455
  • Abstract
    Measured equivalent gate noise voltage spectra of 1-µm gate-length MODFET\´s, for the frequency range of 0.01 Hz-100 MHz, are presented. They indicate that the noise consists of several high-intensity trap-related generation-recombination (g-r) noise components superimposed on a background 1/f noise. The g-r noise is reduced when the Al mole-fraction is lowered. The same occurs when the gate reverse bias is increased. At 100 K the g-r noise bulge moves towards subaudio frequencies clearly revealing the 1/f noise.
  • Keywords
    Background noise; Epitaxial layers; FETs; Frequency measurement; HEMTs; MODFETs; Noise generators; Noise measurement; Noise reduction; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26190
  • Filename
    1485343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105792