DocumentCode :
1105792
Title :
Noise behavior of 1-µm gate-length modulation-doped FET´s from 10-2to 108Hz
Author :
Liu, S.M. ; Das, M.B. ; Kopp, W. ; Morkoç, H.
Author_Institution :
The Pennsylvania State University, University Park, PA
Volume :
6
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
453
Lastpage :
455
Abstract :
Measured equivalent gate noise voltage spectra of 1-µm gate-length MODFET\´s, for the frequency range of 0.01 Hz-100 MHz, are presented. They indicate that the noise consists of several high-intensity trap-related generation-recombination (g-r) noise components superimposed on a background 
noise. The g-r noise is reduced when the Al mole-fraction is lowered. The same occurs when the gate reverse bias is increased. At 100 K the g-r noise bulge moves towards subaudio frequencies clearly revealing the noise.
noise. The g-r noise is reduced when the Al mole-fraction is lowered. The same occurs when the gate reverse bias is increased. At 100 K the g-r noise bulge moves towards subaudio frequencies clearly revealing the noise.Keywords :
Background noise; Epitaxial layers; FETs; Frequency measurement; HEMTs; MODFETs; Noise generators; Noise measurement; Noise reduction; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26190
Filename :
1485343
Link To Document :
