DocumentCode
1105797
Title
Fast and simple method for calculating the minority-carrier current in arbitrarily doped semiconductors
Author
Rinaldi, Niccolò F.
Author_Institution
Dept. of Electron. Eng., Naples Univ., Italy
Volume
15
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1025
Lastpage
1026
Abstract
A fast numerical method for evaluating the minority-carrier current injected into arbitrarily doped semiconductor regions is presented. The method is based on an efficient regional approach and is very easy to implement
Keywords
doping profiles; electric current; minority carriers; numerical analysis; semiconductor device models; semiconductors; arbitrarily doped semiconductors; fast numerical method; minority-carrier current; Analytical models; Bipolar transistors; Differential equations; Doping profiles; Nonlinear equations; P-n junctions; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Spontaneous emission;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.511582
Filename
511582
Link To Document