Title :
Nonlinear integral modeling of dual-gate GaAs MESFET´s
Author :
Vannini, Giorgio
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
6/1/1994 12:00:00 AM
Abstract :
A nonlinear integral approach is adopted for the modeling of Dual-Gate GaAs MESFET´s (DGFET´s) in the framework of Harmonic-Balance circuit analysis. In particular, the model enables the computation of the large-signal performance of DGFET´s directly on the basis of DC characteristics and small-signal bias-dependent admittance parameters without requiring complex procedures for parameter extraction. The validity of the approach is confirmed by accurate physics-based numerical simulations of a DGFET mixer
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric admittance; gallium arsenide; harmonic analysis; integral equations; semiconductor device models; solid-state microwave devices; DC characteristics; DGFET; dual-gate GaAs MESFETs; harmonic-balance circuit analysis; large-signal performance; mixers; nonlinear integral modeling; small-signal bias-dependent admittance parameters; Admittance; Circuit analysis; Electron devices; Equivalent circuits; Frequency; Gallium arsenide; MESFET circuits; Parameter extraction; Predictive models; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
