DocumentCode
1105808
Title
18.5-dB Gain at 18 GHz with a GaAs permeable base transistor
Author
Bozler, C.O. ; Hollis, M.A. ; Nichols, K.B. ; Rabe, S. ; Vera, A. ; Chen, C.L.
Author_Institution
Massachusetts Institute of Technology, Lexington, MA
Volume
6
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
456
Lastpage
458
Abstract
Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This extrapolates to an 
of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired impurities in the grating region of these recent devices. It is quite probable that better performance can be achieved in future devices if those impurities can be eliminated.
of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired impurities in the grating region of these recent devices. It is quite probable that better performance can be achieved in future devices if those impurities can be eliminated.Keywords
Chemical vapor deposition; Doping profiles; Epitaxial growth; Etching; Gain; Gallium arsenide; Gratings; Impurities; Mass spectroscopy; Tungsten;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26191
Filename
1485344
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