• DocumentCode
    1105819
  • Title

    A novel numerical model for SOI devices

  • Author

    Lai, P.T. ; Cheng, Y.C.

  • Author_Institution
    University of Hong Kong, Hong Kong
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    459
  • Lastpage
    461
  • Abstract
    The Poisson´s equation governing the potential distribution of semiconductor-on-insulator (SOI) structures is solved by a novel numerical technique. In this efficient method, no grid-points need to be assigned for all the insulator regions such as the surface oxide layer, buried oxide layer, and sapphire layer.
  • Keywords
    Capacitance; Dielectric devices; Dielectrics and electrical insulation; Helium; Numerical analysis; Numerical models; Poisson equations; Semiconductor devices; Silicon on insulator technology; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26192
  • Filename
    1485345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105819