DocumentCode :
1105837
Title :
Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications
Author :
Tipirneni, N. ; Adivarahan, V. ; Simin, G. ; Khan, A.
Author_Institution :
Univ. of South Carolina, Columbia
Volume :
28
Issue :
9
fYear :
2007
Firstpage :
784
Lastpage :
786
Abstract :
In this letter, new approach in achieving high breakdown voltages in AlGaN/GaN heterostructure field-effect transistors (HFETs) by suppressing surface flashover using solid encapsulation material is presented. Surface flashover in III-Nitride-based HFETs limits the operating voltages at levels well below breakdown voltages of GaN. This premature gate-drain breakdown can be suppressed by immersing devices in high-dielectric-strength liquids (e.g., Fluorinert); however, such a technique is not practical. In this letter, AlGaN/GaN HFETs encapsulated with PECVD-deposited SiO2 films demonstrated breakdown voltage of 900 V, very similar to that of devices immersed in Fluorinert liquid. Simultaneously, low dynamic ON-resistance of 2.43 mOmega ldr cm2 has been achieved, making the developed AlGaN/GaN HFETs practical high-voltage high-power switches for power-electronics applications.
Keywords :
III-V semiconductors; aluminium compounds; encapsulation; gallium compounds; power HEMT; power semiconductor switches; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; AlGaN-GaN; PECVD; SiO2; gate-drain breakdown suppression; high breakdown voltages; high-power switches; high-voltage HFET; power electronics; solid encapsulation material; suppressed surface flashover; voltage 900 V; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Encapsulation; Flashover; Gallium nitride; HEMTs; MODFETs; Silicon; Solids; AlGaN–GaN heterostructure field-effect transistor (HFET); HEMT; breakdown voltage; field plate (FP); high-voltage power device; surface flashover;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.903910
Filename :
4294073
Link To Document :
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