DocumentCode
1105839
Title
A proposed planar junction structure with near-ideal breakdown characteristics
Author
Ahmad, S. ; Akhtar, J.
Author_Institution
Central Electronics Engineering, Research Institute, Pilani, India
Volume
6
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
465
Lastpage
467
Abstract
Addition of a low-concentration p-type pocket around the edge region of p+-n type planar junction improves the electric-field distribution to such an extent that near-ideal breakdown characteristics can be obtained. This has been observed in 2-dimensional computer simulation studies. This is based on the fact that for a specific combination of width and depth of the pocket, the region in which maximum avalanche multiplication occurs, changes from the edge to the plane. Worst-case analysis taking constant impurity profiles in all the regions and rectangular junctions has been presented to know the influence of the edge region. The present structure, if realized by the methods indicated, would result in the highest breakdown voltage of a planar junction
Keywords
Avalanche breakdown; Computer simulation; Doping; Electric breakdown; Etching; Geometry; Ionization; Numerical simulation; Poisson equations; Solid state circuits;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26194
Filename
1485347
Link To Document