Low-frequency noise characterization of n- and p-MOSFET´s with ultrathin oxynitride gate films

Author

Morfouli, P. ; Ghibaudo, G. ; Ouisse, T. ; Vogel, E. ; Hill, W. ; Misra, V. ; McLarty, P. ; Wortman, J.J.

Author_Institution

Lab. de Phys. des Composants a Semicond., Grenoble, France

Volume

17

Issue

8

fYear

1996

Firstpage

395

Lastpage

397

Abstract

MOSFET´s with ultrathin (5 to 8.5 nm) silicon oxynitride gate film prepared by low-pressure rapid thermal chemical vapor deposition (RTCVD) using SiH/sub 4/, N/sub 2/O and NH/sub 3/ gases, are studied by low-frequency noise measurements (1 Hz up to 5 kHz). The analysis takes into account the correlated mobility fluctuations induced by those of the interfacial oxide charge. The nitrogen concentration, determined from SIMS analysis, varies from 0 to 11% atomic percentage. A comparison of the electrical properties between thermal and silicon oxynitride films is presented. The increasing LF noise signal with nitrogen atomic percentage indicates the presence of a higher density of slow interface traps with increasing nitrogen incorporation. Besides, a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after nitridation.

Keywords

1/f noise; CVD coatings; MOSFET; carrier mobility; chemical vapour deposition; dielectric thin films; fluctuations; interface states; nitridation; rapid thermal processing; secondary ion mass spectra; semiconductor device noise; silicon compounds; 1 Hz to 5 kHz; 5 to 8.5 nm; Coulomb scattering rate; LF noise measurements; N/sub 2/O; NH/sub 3/; RTCVD; Si oxynitride films; Si-SiON; SiH/sub 4/; SiO/sub x/N/sub y/ ultrathin gate film; chemical vapor deposition; electrical properties; interfacial oxide charge; low field mobility; low-frequency noise characterization; low-pressure rapid thermal CVD; mobility fluctuations; n-MOSFET; nitridation induced interface charge; p-MOSFET; slow interface traps; ultrathin oxynitride gate films; Atomic measurements; Chemical vapor deposition; Fluctuations; Gases; Low-frequency noise; MOSFET circuits; Nitrogen; Noise measurement; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.511586

Filename

511586