Title :
Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate
Author :
Yamamoto, N. ; Akahane, K. ; Gozu, S. ; Ohtani, N.
Author_Institution :
Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Abstract :
An Sb-based quantum-dot vertical-cavity surface-emitting laser (QD-VCSEL) operating in the 1.3 μm optical communication waveband is presented. A QD-VCSEL containing high-density InGaSb QDs in the active region is fabricated on GaAs substrate. The density of InGaSb QDs is drastically increased using a new method of an Si atom irradiation technique. A long-wavelength laser emission at 1.34 μm is successfully achieved on the InGaSb QD-VCSEL in CW operation at room temperature.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical communication equipment; quantum dot lasers; surface emitting lasers; 1.34 micron; CW laser emission; GaAs substrate; InGaSb; InGaSb QD-VCSEL; InGaSb quantum-dot vertical-cavity surface-emitting laser; Si atom irradiation; optical communication waveband; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045894
