• DocumentCode
    1105968
  • Title

    Effects of nonlinear gain on single longitudinal mode behavior of semiconductor lasers

  • Author

    Guo, Chang-Zhi ; Xie, Jing-Shan ; Shen, Feng

  • Author_Institution
    Beijing University, Beijing, China
  • Volume
    21
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    794
  • Lastpage
    803
  • Abstract
    The effects of nonlinear gain on the single longitudinal mode are analyzed by means of multilongitudinal mode and multitransverse mode rate equations and compared with the linear gain calculations and experments. It is shown that further suppression of the third order nonlinear gain on nonlasing modes always serves to accelerate the process of the single longitudinal mode operation and that results obtained with long cavity length are entirely contrary to those where only linear gain is considered. The experiments also show that single longitudinal mode lasers with even larger output power can be realized with long cavity length; and, with further proper reduction of the stripe width, single mode (single frequency) operation can be realized. But the results obtained from both gain considerations indicate that single longitudinal mode operation will be facilitated if the active layer is not too thin and the end face reflectivity is increased.
  • Keywords
    Laser modes; Optical propagation in nonlinear media; Semiconductor lasers; Acceleration; Frequency; Gain; Laser modes; Laser theory; Nonlinear equations; Power generation; Power lasers; Reflectivity; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072734
  • Filename
    1072734