• DocumentCode
    1105969
  • Title

    Nonalloyed ohmic contacts to n-type GaAs by pulsed ruby laser diffused tin from tin-silica film

  • Author

    Kalkur, T.S. ; Nassibian, A.G. ; Rose, A.

  • Author_Institution
    University of Western Australia, Nedlands, Australia
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    489
  • Lastpage
    490
  • Abstract
    Nonalloyed ohmic contacts were formed on n+diffused layers on GaAs. The n+layers were formed on semi-insulating substrates by depositing a layer of tin-silica film and irradiating by ruby laser alone without thermal diffusion. Vacuum-evaporated AuGe-Ni contacts display low specific contact resistance ≃1.8 × 10-6Ω.cm2, without alloying.
  • Keywords
    Conductivity; Gallium arsenide; Laser beams; Metallization; Ohmic contacts; Optical pulses; Pulsed laser deposition; Surface emitting lasers; Surface morphology; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26204
  • Filename
    1485357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105969