Title :
Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements
Author_Institution :
M.I.T. Lincoln Laboratory, Lexington, MA
fDate :
10/1/1985 12:00:00 AM
Abstract :
The Kurokawa-Schlosser quality factor Q̂ is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q̂ is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs pin has the higher Q̂ and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.
Keywords :
Capacitance; Contact resistance; Electrical resistance measurement; Gallium arsenide; Length measurement; MESFETs; P-i-n diodes; Phase frequency detector; Surface resistance; Switches;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26210
