• DocumentCode
    1106046
  • Title

    40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

  • Author

    Fukano, H. ; Yamanaka, T. ; Tamura, M. ; Nakajima, H. ; Akage, Y. ; Kondo, Y. ; Saitoh, T.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Kanagawa, Japan
  • Volume
    40
  • Issue
    18
  • fYear
    2004
  • Firstpage
    1144
  • Lastpage
    1146
  • Abstract
    40 Gbit/s electroabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; 1.1 V; 40 Gbit/s; InGaAlAs-InAlAs; RF extinction ratio; driving voltage; electroabsorption length; electroabsorption modulators; fabrication; strain-compensated InGaAlAs-InAlAs multiquantum-well layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045968
  • Filename
    1335025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106046