Hot electrons and holes in MOSFET´s biased below the Si—SiO2interfacial barrier

This work presents an investigation of low-voltage hot carrier injection in submicrometer size MOSFET´s showing that for both electrons and holes it can take place even when the maximum energy to be gained by the applied field is less than the Si-SiO2interfacial barrier height. In the case of electrons, it is also shown that the injection process, due to Auger recombination at low applied drain-to-source voltages (VDS), is well described by the lucky-electron model (LEM) as soon as VDSexceeds the threshold for this to become applicable.