DocumentCode :
1106100
Title :
Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap
Author :
Hafez, W. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, IL, USA
Volume :
40
Issue :
18
fYear :
2004
Firstpage :
1151
Lastpage :
1153
Abstract :
InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to increase fMAX. Type I InP SHBTs have been fabricated with 0.25 μm emitter widths and achieve fMAX values as high as 478 GHz on a laterally scaled LE=1 μm device, and maintain breakdown voltages greater than 4 V.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; 0.25 micron; 478 GHz; InP-InGaAs; InP-InGaAs SHBT; InP-InGaAs single heterojunction bipolar transistors; emitter resistance; highly doped InAs emitter cap; lateral scaling; semiconductor device breakdown;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045962
Filename :
1335032
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1106100
بازگشت