• DocumentCode
    1106143
  • Title

    Scaled performance for submicron GaAs MESFET´s

  • Author

    Yokoyama, K. ; Tomizawa, M. ; Yoshii, A.

  • Author_Institution
    University of Illinois, Urbana, IL
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    536
  • Lastpage
    538
  • Abstract
    Scaling schemes for GaAs MESFET´s below the submicron gate length are proposed. The corresponding switching times are calculated accurately down to 0.25µm gate length devices using an ensemble Monte Carlo simulation program. It is demonstrated that the proposed scaled devices offer ultrashort switching time due to the nonstationary carrier transport effects.
  • Keywords
    Degradation; Doping; Electron mobility; Gallium arsenide; Impurities; MESFETs; Optical scattering; Particle scattering; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26221
  • Filename
    1485374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106143