• DocumentCode
    1106172
  • Title

    An isolated MISS regenerative switching device

  • Author

    Chang, C.Y. ; Tzeng, F.C. ; Chen, C.T. ; Wang, S.J. ; Wang, Y.D.

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    545
  • Lastpage
    547
  • Abstract
    A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal oxide/p-n+-p-Si layers and is isolated by diffusing n-well to the buried n+layer. Furthermore, an N+-shield layer which confines the carrier flow to the MIS interface and a p+-gate which injects carriers in the n+-p junction were successfully implemented. The device reveals that switching and holding voltages Vsand VHboth decrease with increasing A_{0x} , and with decreasing A_{J} and d_{0x} . The fringing effect is minimized due to the isolated structure.
  • Keywords
    Charge carrier processes; Dielectrics; Electrodes; Fabrication; Helium; Metal-insulator structures; P-n junctions; Temperature; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26224
  • Filename
    1485377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106172