Title :
On the storage time of InGaAs/InP bipolar transistors
Author :
Su, L.M. ; Mekonnen, G. ; Grote, N.
Author_Institution :
Peking Electron Tube Factory, Peking, China
fDate :
10/1/1985 12:00:00 AM
Abstract :
The collector storage time was measured for InGaAs/InP bipolar transistors. For the evaluation, the transistors were driven into deep saturation choosing a test condition with no reverse base current. Devices comprising a homojunction- and a modified wide-gap-collector structure, respectively, were compared. For the latter device structure a marked reduction of the storage time by a factor of 10 was found.
Keywords :
Bipolar transistors; Circuit testing; Doping; Employment; Helium; Indium gallium arsenide; Indium phosphide; Pulse measurements; Switches; Time measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26227
