Transconductance of Silicon-on-insulator (SOI) MOSFET´s

Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET´s has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices. On the other hand, transconductance exhibits an unusual behavior when backside gate is positively biased. This is caused by mutual influence between the front-and the backside gate-related depletion zones. Modeling of transconductance using numerical solution of Poisson´s equation show good agreement with experimental results.