Title :
The study on hole mobility in the inversion layer of P-channel MOSFET
Author :
Kaneko, Masaru ; Narita, Izuru ; Matsumoto, Shinichi ; Matsumoto, Satoru
Author_Institution :
Keio University, Hiyoshi, Yokohama, Japan
fDate :
11/1/1985 12:00:00 AM
Abstract :
The mobility and the density of holes in the inverted
Keywords :
Density measurement; Doping; Electron mobility; MOSFET circuits; Particle scattering; Phonons; Rough surfaces; Surface roughness; Temperature; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26235
