A novel method of reducing the storage time of transistors

During the transistor fabrication a recombination mechanism is incorporated within the base to reduce the storage time. In the emitter diffusion process, besides emitter, the same diffusion is also done in an annular region (within base) which surrounds the emitter. Connecting the base contact metal pattern to both the ohmic base contact and the annular diffused region provides a path for the majority and minority carriers to recombine. This additional recombination mechanism reduces the storage time of transistors.