• DocumentCode
    1106335
  • Title

    Passivation of ohmic contacts to GaAs

  • Author

    Lakhani, Amir A. ; Olver, L.C. ; Dvorsky, E.F. ; Hempfling, E.U.

  • Author_Institution
    Allied/Bendix Aerospace Technology Center, Columbia, MD
  • Volume
    6
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    586
  • Lastpage
    588
  • Abstract
    A film of silicon dioxide was used to passivate Au-Ge-Ni metallization during the alloying cycle. Ohmic contacts prepared in this way had smooth surfaces, better edge definition, and more uniform electrical characteristics. Also the time-temperature alloying cycle for fabricating suitable contacts was significantly broadened. These improvements are most likely due to the prevention of arsenic loss during the alloying procedure.
  • Keywords
    Alloying; Electric variables; Gallium arsenide; Metallization; Ohmic contacts; Passivation; Rough surfaces; Surface morphology; Surface roughness; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26239
  • Filename
    1485392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106335