A monolithic four-channel photoreceiver integrated on a GaAs substrate using metal-semiconductor-metal photodiodes and FET´s

The first fabrication of a monolithic four-channel photoreceiver on a GaAs substrate, using metal-semiconductor-metal (MSM) photodiodes and GaAs metal-semiconductor field-effect transistors (MESFET´s) is described. The present photoreceiver operating in the 0.8- µm wavelength region has shown uniform sensitivity with little crosstalk between channels and also giga-bit response. The result suggests that the use of MSM photodiodes and FET´s has good expansibility toward high-density and multi-channel monolithic integration.