Title :
Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers
Author :
Chinone, Naoki ; Kuroda, Takao ; Ohtoshi, Tsukuru ; Takahashi, Takeo ; Kajimura, Takashi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
8/1/1985 12:00:00 AM
Abstract :
Mode-hopping noise in index-guided semiconductor lasers is investigated. It is found that random switching between lasing modes and output power differences in those modes cause mode-hopping noise. An effective method to suppress such mode-hopping noise is proposed. High Te doping to an n-type GaAlAs cladding layer completely suppresses the noise. Te in GaAlAs forms a DX center that acts as a saturable absorber. This property stabilizes the laser mode and prevents mode competition. The minimum loss difference between lasing and nonlasing modes to suppress mode-hopping noise is also discussed.
Keywords :
Gallium materials/devices; Laser absorbers; Laser noise; Semiconductor defects; Laser modes; Laser noise; Laser stability; Noise reduction; Power generation; Power semiconductor switches; Semiconductor device doping; Semiconductor device noise; Semiconductor lasers; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1985.1072788