DocumentCode
1106556
Title
Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers
Author
Chinone, Naoki ; Kuroda, Takao ; Ohtoshi, Tsukuru ; Takahashi, Takeo ; Kajimura, Takashi
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
21
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
1264
Lastpage
1270
Abstract
Mode-hopping noise in index-guided semiconductor lasers is investigated. It is found that random switching between lasing modes and output power differences in those modes cause mode-hopping noise. An effective method to suppress such mode-hopping noise is proposed. High Te doping to an n-type GaAlAs cladding layer completely suppresses the noise. Te in GaAlAs forms a DX center that acts as a saturable absorber. This property stabilizes the laser mode and prevents mode competition. The minimum loss difference between lasing and nonlasing modes to suppress mode-hopping noise is also discussed.
Keywords
Gallium materials/devices; Laser absorbers; Laser noise; Semiconductor defects; Laser modes; Laser noise; Laser stability; Noise reduction; Power generation; Power semiconductor switches; Semiconductor device doping; Semiconductor device noise; Semiconductor lasers; Tellurium;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072788
Filename
1072788
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