Title :
Study on Oscillations During Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System
Author :
Rui Wu ; Diaz Reigosa, Paula ; Iannuzzo, Francesco ; Smirnova, Liudmila ; Huai Wang ; Blaabjerg, Frede
Author_Institution :
Centre of Reliable Power Electron., Aalborg Univ., Aalborg, Denmark
Abstract :
This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.
Keywords :
circuit oscillations; field programmable gate arrays; insulated gate bipolar transistors; nondestructive testing; power transistors; short-circuit currents; IGBT power modules; control signals; current 6 kA; field-programmable gate array; insulated-gate bipolar transistor power modules; nondestructive testing system; nonnegligible circuit stray inductance; ransconductance temperature dependence; severe divergent oscillations; short-circuit behavior analysis; voltage 1.1 kV; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Oscillators; Testing; Insulated-Gate Bipolar Transistor (IGBT); Insulated-gate bipolar transistor (IGBT); Non-destructive Testing; Oscillations; Power Modules; Reliability; Short Circuit; nondestructive testing; oscillations; power modules; reliability; short circuit;
Journal_Title :
Emerging and Selected Topics in Power Electronics, IEEE Journal of
DOI :
10.1109/JESTPE.2015.2414448
