DocumentCode :
1106561
Title :
Current crowding effects and determination of specific contact resistivity from contact end resistance (CER) measurements
Author :
Swirhun, S.E. ; Loh, W.M. ; Swanson, R.M. ; Saraswat, K.C.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
Volume :
6
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
639
Lastpage :
641
Abstract :
Current crowding effects on Contact End Resistance (CER) test structures due to the finite diffusion overlap of the contact window are studied by experiment and numerical simulation. This finite overlap adds a parasitic resistance component not accounted for by the standard one-dimensional theory, and if uncorrected, this parasitic resistance may lead to gross overestimation of the true specific contact resistivity ρc. The overestimate increases with increasing diffusion sheet resistance and large contact size. Excellent agreement between experiment and simulations has allowed this effect to be modeled. Accurate values of ρcin the range of 5 × 10-8to 2 × 10-5Ω cm2are extracted using CER structures.
Keywords :
Conductivity; Contact resistance; Current measurement; Data mining; Electrical resistance measurement; Proximity effect; Resistors; Semiconductor device modeling; Silicon; Testing;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26259
Filename :
1485412
Link To Document :
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