• DocumentCode
    1106573
  • Title

    A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor

  • Author

    Seo, K.S. ; Bhattacharya, Pallab K. ; Nashimoto, Y. ; Nashimoto, Y.

  • Author_Institution
    University of Michigan, Ann Arbor, MI
  • Volume
    6
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    642
  • Lastpage
    644
  • Abstract
    This letter reports the materials characteristics and device performance of a In0.53Ga0.47As-In0.52Al0.48As single quantum well (SQW) field-effect transistor grown by molecular beam epitaxy on
  • Keywords
    Dielectric substrates; Epitaxial layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; MISFETs; Molecular beam epitaxial growth; Temperature measurement; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26260
  • Filename
    1485413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106573