Title :
CMOS Well drive-In in NH3for reduced lateral diffusion and heat cycle
Author :
Wong, S.S. ; Ekstedt, T.W.
Author_Institution :
Cornell University, Ithaca, NY
fDate :
12/1/1985 12:00:00 AM
Abstract :
CMOS n-well drive-in performed in an NH3ambient is described. Experimental results on the reduction of heat cycle and lateral diffusion as well as the effects on device characteristics and latch-up are discussed.
Keywords :
Atomic layer deposition; Boron; Etching; Helium; Implants; Resists; Silicon; Substrates; Temperature; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26265
