• DocumentCode
    1106622
  • Title

    CMOS Well drive-In in NH3for reduced lateral diffusion and heat cycle

  • Author

    Wong, S.S. ; Ekstedt, T.W.

  • Author_Institution
    Cornell University, Ithaca, NY
  • Volume
    6
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    661
  • Abstract
    CMOS n-well drive-in performed in an NH3ambient is described. Experimental results on the reduction of heat cycle and lateral diffusion as well as the effects on device characteristics and latch-up are discussed.
  • Keywords
    Atomic layer deposition; Boron; Etching; Helium; Implants; Resists; Silicon; Substrates; Temperature; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26265
  • Filename
    1485418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106622