Title :
High-speed low-power circuits fabricated using a submicron NMOS technology
Author :
Fichtner, Wolfgang ; Hofstatter, E.A. ; Watts, R.K. ; Bayruns, Robert J. ; Bechtold, P.F. ; Johnston, R.L. ; Boulin, D.M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
12/1/1985 12:00:00 AM
Abstract :
We present results on very high-speed low-power devices and circuits fabricated using a NMOS technology scaled to submicron dimensions. These results illustrate the electrical behavior of single minimum-size devices, and present the performance of several submicron circuits, such as ring oscillators, a 3-GHz divide-by-two counter and a 90- MHz 16 × 16 multiplier.
Keywords :
Counting circuits; Degradation; Hot carriers; Implants; MOS devices; Power dissipation; Power generation; Power supplies; Ring oscillators; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26266