Title :
A seeded-channel silicon-on-insulator (SOI) MOS technology
Author :
Baerg, W. ; Sturm, James C. ; Hwa, T.L. ; Lin, H.Y. ; Siu, B.B. ; Ting, C.H. ; Tzeng, J.C. ; Gibbons, J.F.
Author_Institution :
Intel Corporation, Santa Clara, CA
fDate :
12/1/1985 12:00:00 AM
Abstract :
An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This "seeded-channel" configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.
Keywords :
CMOS technology; Capacitance; Degradation; Epitaxial growth; Inverters; MOSFET circuits; Molecular beam epitaxial growth; Silicon on insulator technology; Space technology; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26268
