Title :
A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs
Author :
Yutao Wang ; Zhangming Zhu ; Jiaojiao Yao ; Yintang Yang
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
We present a low-voltage low-power CMOS subthreshold voltage reference with no resistors and no bipolar junction transistors in a wide temperature range. The temperature stability is improved by second-order compensation. By employing a bulk-driven technique and the MOS transistors working in the subthreshold region, the supply voltage and the power dissipation are reduced. Moreover, a trimming circuit is adopted to compensate for the process-related reference voltage variation. The proposed voltage reference has been fabricated with the 0.18-μm 1.8-V CMOS process. The measurement results show that the minimum power supply voltage is 0.45 V, the power consumption is 14.6 nW, the average temperature coefficient measured from -40 °C to 125 °C is 63.6 ppm/°C, and the line regulation is 1.2 mV/V in the power supply voltage ranging from 0.45 to 1.8 V. In addition, the chip area is 0.012 mm2.
Keywords :
CMOS analogue integrated circuits; MOSFET; low-power electronics; reference circuits; MOS transistors; low-voltage low-power CMOS subthreshold voltage reference; power 14.6 nW; power dissipation; reference voltage variation; second-order compensation; size 0.012 mm; size 0.18 mum; supply voltage; temperature 40 degC to 125 degC; temperature stability; trimming circuit; voltage 0.45 V; voltage 1.8 V; CMOS integrated circuits; Generators; MOSFET; Temperature measurement; Threshold voltage; Voltage measurement; Bulk driven; Bulk-driven; Low Power; Low Voltage; Sub-threshold; Voltage Reference; Wide Temperature Range; low power; low voltage; subthreshold; voltage reference; wide temperature range;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2015.2415292