Title :
Silicon-Based 2-D Slab Photonic Crystal TM Polarizer at Telecommunication Wavelength
Author :
Cui, Yonghao ; Wu, Qi ; Schonbrun, Ethan ; Tinker, Mark ; Lee, J.-B. ; Park, Won
Author_Institution :
Univ. of Texas at Dallas, Richardson
fDate :
4/15/2008 12:00:00 AM
Abstract :
We report an extremely compact (15.4 mum x 8 mum) silicon-based 2D slab nano photonic crystal (PC) transverse-magnetic (TM) polarizer which blocks propagation of the transverse-electric (TE) polarized light but passes TM polarized light around telecommunication wavelength (1550 nm). The TE polarized light totally vanishes but the TM polarized light propagates with some attenuation in a length of mere 4.9 mum and it has a great potential to be integrated in a complex photonic integrated circuits. To our knowledge, this is the first experimental demonstration of a silicon-based PC TM polarizer at 1.55-mum wavelength. The plane wave expansion method (PWEM) and 2-D and 3-D finite-difference time-domain (FDTD) simulation were utilized to design a periodic triangular array of air holes in 340-nm-thick silicon with a diameter of 170 nm and pitch distance of 347 nm for the TM polarizer and 371 nm for the input and output waveguide. Such a PC TM polarizer was fabricated in silicon-on-insulator wafer using focused ion beam and reactive ion etching. The device was characterized using tunable lasers in the wavelength range of 1528 nm~1604 nm. Transmitted light intensities of the TE and TM polarized lights were measured which clearly showed the TE polarized light is filtered out around 1.55-mum wavelength.
Keywords :
finite difference time-domain analysis; focused ion beam technology; integrated optics; light polarisation; optical polarisers; photonic crystals; silicon-on-insulator; sputter etching; TM polarized light; TM polarizer; air holes; finite-difference time-domain simulation; focused ion beam etching; periodic triangular array; photonic integrated circuits; plane wave expansion method; reactive ion etching; silicon-based 2D slab photonic crystal; silicon-on-insulator wafer; size 15.4 mum; size 340 nm; size 8 mum; telecommunication wavelength; transverse-electric polarized light; transverse-magnetic polarizer; tunable lasers; wavelength 1550 nm; Circuit simulation; Finite difference methods; Optical attenuators; Optical polarization; Optical propagation; Photonic crystals; Photonic integrated circuits; Slabs; Tellurium; Time domain analysis; Photonic crystal; polarizer; silicon; slab; telecommunication;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.919508