Efficiency Enhancement of Light Extraction in LED With a Nano-Porous GaP Surface

Author

Hwang, J.M. ; Hung, W.H. ; Hwang, H.L.

Author_Institution

Next Generation Lighting Source, Hsinchu

Volume

20

Issue

8

fYear

2008

fDate

4/15/2008 12:00:00 AM

Firstpage

608

Lastpage

610

Abstract

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 times 10⁸ cm^-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; light emitting diodes; nanoporous materials; photoelectrochemistry; surface structure; AlInGaP; AlInGaP-based light-emitting device; GaP; LED; current 20 mA to 40 mA; efficiency enhancement; electrodeless photoelectrochemical etching; light emitting diodes; light extraction; nanoporous GaP surface; photon scattering; porous surface structure; short mean free path; size 300 nm to 700 nm; Dry etching; Fabrication; Lattices; Light emitting diodes; Light scattering; Particle scattering; Refractive index; Rough surfaces; Substrates; Surface roughness; Light-emitting diode (LED); photoelectrochemical (PEC) etching; surface roughening;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.918821

Filename

4475233