Single-mode optical waveguides and phase modulators in the InP material system

Author

Donnelly, J.P. ; Demeo, N.L. ; Leonberger, F.J. ; Groves, S.H. ; Vohl, P. ; O´Donnell, F.J.

Author_Institution

Massachusetts Institute of Technology, Lexington, MA, USA

Volume

21

Issue

8

fYear

1985

fDate

8/1/1985 12:00:00 AM

Firstpage

1147

Lastpage

1151

Abstract

The characteristics of several different single-mode optical waveguides in the InP material system are discussed. Slab-coupled rib waveguides in GaInAsP ( $\\lambda _{gap} \\approx 1 \\mu$ m) epitaxial layers grown on InP have shown propagation losses as low as 1.7 cm^-1at 1.3 μm and 2.7 cm^-1at 1.15 μm. Oxide-confined InP rib guides fabricated using a lateral overgrowth technique have losses of about 1.5 cm^-1at 1.15 μm. Three-guide couplers have been made by fabricating three parallel oxide-confined guides in close proximity. InP p+-n-n+ guides capable of modulating TE-polarized radiation have been fabricated using epitaxial techniques and Be-ion implantation. By measuring the phase difference between the TE-like and TM-like modes as a function of applied voltage, an estimate of the r41electrooptic coefficient in InP at 1.3 μm that is in good agreement with a previously reported value was obtained. Guides of this type should find use as the active components in InP switches and interferometers.

Keywords

Indium materials/devices; Optical polarization; Optical strip waveguides; Phase modulation; Couplers; Epitaxial layers; Indium phosphide; Optical interferometry; Optical materials; Optical modulation; Optical waveguides; Phase measurement; Phase modulation; Propagation losses;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1985.1072804

Filename

1072804