Title :
A planar InGaAs PIN/JFET fiber-optic detector
Author :
Ohnaka, Kiyoshi ; Inoue, Kaoru ; Uno, Tomoaki ; Hasegawa, Katsuya ; Hase, Nobuyasu ; Serizawa, Hiroyuki
Author_Institution :
Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., Osaka, Japan
fDate :
8/1/1985 12:00:00 AM
Abstract :
A planar structure monolithic optoelectronic integrated circuit (OEIC), comprising an InGaAs PIN photodiode and an InGaAs junction field effect transistor (JFET), has been developed. A cutoff frequency of 1.3 GHz has been successfully obtained. A low dark-current characteristic has also been obtained by polyimide passivation. Design principle, fabrication procedures, and operation characteristics of the PIN/JFET are described.
Keywords :
Gallium materials/devices; Integrated optics; JFET amplifiers; Optical fiber receivers; Cutoff frequency; Detectors; FET integrated circuits; Indium gallium arsenide; JFET integrated circuits; Monolithic integrated circuits; Optoelectronic devices; PIN photodiodes; Passivation; Polyimides;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1985.1072808
