• DocumentCode
    1106838
  • Title

    An approach toward 20-percent-efficient silicon solar cells

  • Author

    Rohatgi, Ajeet ; Rai-Choudhury, P.

  • Author_Institution
    Georgia Institute of Technology, Atlanta, GA
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    This paper shows that oxide surface passivation coupled with optimum multilayer antireflective coating can provide ∼3 percent (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15- 15.5 percent on high-quality 4-Ω . cm as well as 0.1-0.2-Ω . cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to ≥ 17 percent. An optimum double-layer AR coating on oxide-passivated cells provides an additional ∼5-10 percent improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18 percent. Experimentally observed improvements are supported by model calculations, and an approach to ≥20 percent efficient cells is discussed.
  • Keywords
    Coatings; Doping; Nonhomogeneous media; Passivation; Photonic band gap; Photovoltaic cells; Research and development; Semiconductor process modeling; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22428
  • Filename
    1485645