Title :
A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs
Author :
Baishya, S. ; Mallik, A. ; Sarkar, C.K.
Author_Institution :
Nat. Inst. of Technol., Silchar
Abstract :
An analytical subthreshold surface potential model for dual-material gate MOSFETs, which considers a varying depth of the channel depletion layer due to the difference in Hatband voltages, and also due to the depletion layers around the source/drain junctions, is presented. The model predictions are compared with the predictions by the 2-D numerical device simulator DESSIS, and a very good agreement between the two is observed.
Keywords :
MOSFET; surface potential; DESSIS; channel depletion layer; dual-material gate MOSFET; flatband voltages; pseudo two-dimensional subthreshold surface potential model; source-drain junctions; CMOS logic circuits; CMOS technology; Circuit simulation; Degradation; Dynamic voltage scaling; Logic circuits; MOSFETs; Numerical simulation; Predictive models; Subthreshold current; Depletion layer depth; dual-material gate (DMG)-MOSFETs; gate material work function difference; subthreshold surface potential;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.903204
